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FGD3N60UNDF - onsemi

Description: High current capability; High input impedance; Short circuit rated 10us; Fast switching; RoHS compliant

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FGD3N60UNDF Details

  • Manufacturer Part Number:

    FGD3N60UNDF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    8.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    146 ns

  • Turn-on Time-Nom (ton):

    7.4 ns

FGD3N60UNDF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FGD3N60UNDF is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 0V and 600V.
  • The recommended gate resistor value is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the FGD3N60UNDF is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure proper PCB layout and decoupling to minimize ringing and oscillations.
  • To protect the FGD3N60UNDF, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.

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FGD3N60UNDF Overview

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Part Image FGD3N60UNDF Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252