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FGH40N65UFDTU - onsemi

Description: Low saturation voltage: VCE(sat) =1.8V @ IC = 40A; High current capability; Fast switching: EOFF =12uJ/A ; RoHS compliant; High Input Impedance

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PCB Footprints
FGH40N65UFDTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3LD CASE 340CH ISSUE A
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FGH40N65UFDTU - onsemi  - 3D model - Transistor Outline, Vertical - TO-247-3LD CASE 340CH ISSUE A
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FGH40N65UFDTU Details

  • Manufacturer Part Number:

    FGH40N65UFDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    60 ns

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    290 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    152 ns

  • Turn-on Time-Nom (ton):

    58 ns

  • VCEsat-Max:

    2.4 V

FGH40N65UFDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FGH40N65UFDTU can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow to dissipate heat.
  • The recommended gate drive voltage for the FGH40N65UFDTU is between 10V and 15V. This ensures reliable switching and minimizes the risk of damage to the device.
  • Yes, the FGH40N65UFDTU can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of threshold voltage and transconductance to prevent uneven current sharing.
  • The maximum dv/dt rating for the FGH40N65UFDTU is 50 V/ns. Exceeding this rating can cause the device to fail or malfunction.

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Part Image FGH40N65UFDTU_F085 onsemi

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB