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FGH40T65SHD-F155 - onsemi

Description: Fast Switching; High Current Capability; Positive Temperature Co-efficient for Easy Parallel Operating; Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 40 A; 100% of the Parts Tested for ILM(1); Maximum Junction Temperature : TJ =175°C; High Input Impedance; Tighten Parameter Distribution; RoHS Compliant

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FGH40T65SHD-F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3LD
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FGH40T65SHD-F155 - onsemi  - 3D model - Transistor Outline, Vertical - TO-247-3LD
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FGH40T65SHD-F155 Details

  • Manufacturer Part Number:

    FGH40T65SHD-F155

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247 3L

  • Package Description:

    TO-247G03, 3 PIN

  • Manufacturer Package Code:

    340CH

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7.5 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    268 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    85.6 ns

  • Turn-on Time-Nom (ton):

    51.2 ns

  • VCEsat-Max:

    2.1 V

FGH40T65SHD-F155 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal pad size of at least 50 mm². For thermal management, use a heat sink with a thermal interface material and ensure good airflow.
  • Use a shielded enclosure, keep sensitive components away from the FGH40T65SHD-F155, and use a common-mode choke or ferrite bead to filter out high-frequency noise. Ensure proper grounding and decoupling of the device.
  • The FGH40T65SHD-F155 has a typical lifespan of 10-15 years under normal operating conditions (TJ ≤ 150°C, VCC ≤ 650V). However, this can vary depending on factors like temperature, voltage, and current stress. Consult onsemi's reliability report for more information.
  • Use a voltage regulator or overvoltage protection (OVP) circuit to prevent voltage spikes. Implement overcurrent protection (OCP) using a current sense resistor and a comparator. For ESD protection, use a TVS diode or a dedicated ESD protection IC.
  • Use a dedicated gate driver IC with a high current capability (e.g., 2A-5A) and a voltage rating that matches the FGH40T65SHD-F155's VCC. Ensure a low-inductance gate drive circuit and a stable bias voltage supply. Consult onsemi's application notes for more information.

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