Part Image

FGH75T65SQD-F155 - onsemi

Description: 100% of the Parts Tested for ILM(1); High Current Capability; Fast Switching; Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A; Maximum Junction Temperature: TJ =175°C; Tighten Parameter Distribution; RoHS Compliant; High Input Impedance; Positive Temperature Co-efficient for Easy Parallel Operating

Download FGH75T65SQD-F155 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FGH75T65SQD-F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FGH75T65SQD-F155*
click to zoom
3D Models
FGH75T65SQD-F155 - onsemi  - 3D model - Transistor Outline, Vertical - FGH75T65SQD-F155*
click to zoom

FGH75T65SQD-F155 Details

  • Manufacturer Part Number:

    FGH75T65SQD-F155

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247 3L

  • Manufacturer Package Code:

    340CH

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    RC-IGBT

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    149 ns

  • Turn-on Time-Nom (ton):

    48 ns

  • VCEsat-Max:

    2.1 V

FGH75T65SQD-F155 Frequently Asked Questions (FAQs)

  • The recommended gate resistor value is typically between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher value can reduce EMI, but may slow down the switching speed.
  • Ensure good thermal contact between the IGBT and the heat sink. Apply a thin layer of thermal interface material, and secure the IGBT to the heat sink using screws or a clip. Also, ensure good airflow around the heat sink.
  • The maximum allowed voltage imbalance is typically ±10% of the rated voltage (650V). Exceeding this can lead to uneven stress and reduced lifespan.
  • Yes, the FGH75T65SQD-F155 can be used in resonant converter topologies, but ensure the design takes into account the IGBT's switching characteristics and the resonant circuit's frequency and impedance.
  • Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. For overvoltage protection, use a voltage clamp or a transient voltage suppressor (TVS) diode.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FGH75T65SQD-F155 Overview

Use the download button to access the FGH75T65SQD-F155 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FGH75, or try a keyword search, such as IGBTs

Parts related to FGH75T65SQD-F155

Showing 0 results