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FGH75T65SQDTL4 - onsemi

Description: Tighten Parameter Distribution; High Current Capability; High Input Impedance; Fast Switching; RoHS Compliant; Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A; Maximum Junction Temperature: TJ = 175°C; Positive Temperature Co-efficient for Easy Parallel Operating; 100% of the Parts tested for ILM(1)

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FGH75T65SQDTL4 - onsemi - PCB symbol
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PCB Footprints
FGH75T65SQDTL4 - onsemi PCB footprint - Other - Other - TO−247−4LD CASE 340CJ ISSUE O
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FGH75T65SQDTL4 - onsemi - 3D model - Other - TO−247−4LD CASE 340CJ ISSUE O
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FGH75T65SQDTL4 Details

  • Manufacturer Part Number:

    FGH75T65SQDTL4

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    2017-02-10

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Additional Feature:

    RC-IGBT

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    352 ns

  • Turn-on Time-Nom (ton):

    80 ns

  • VCEsat-Max:

    2.1 V

FGH75T65SQDTL4 Frequently Asked Questions (FAQs)

  • The recommended gate resistor value is typically between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher value can reduce EMI, but may slow down the switching speed.
  • Ensure good thermal contact between the IGBT and the heat sink. Apply a thin layer of thermal interface material, and secure the IGBT to the heat sink using screws or a clip. Also, consider the airflow and heat sink design to maximize heat dissipation.
  • The maximum allowed voltage imbalance is typically ±5% of the rated voltage (650V). Exceeding this limit can lead to uneven stress and reduced lifespan.
  • Yes, the FGH75T65SQDTL4 can be used in resonant converter topologies, but ensure the design takes into account the IGBT's switching characteristics, and the resonant circuit is properly tuned to minimize losses and EMI.
  • Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. For overvoltage protection, use a voltage clamp or a transient voltage suppressor (TVS) diode.

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FGH75T65SQDTL4 Overview

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