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FGH75T65UPD-F085 - onsemi

Description: Maximum Junction Temperature : TJ= 175oC; Qualified to Automotive Requirements of AEC-Q101; Tightened Parameter Distribution; High current capability; Positive Temperaure Co-efficient for easy parallel operating; RoHS compliant; Low saturation voltage: VCE(sat)= 1.65V(Typ.) @ IC= 75A; High input impedance

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FGH75T65UPD-F085 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FGH75T65UPD-F085
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FGH75T65UPD-F085 Details

  • Manufacturer Part Number:

    FGH75T65UPD-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-247 3L

  • Manufacturer Package Code:

    340CK

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    33 ns

  • Gate-Emitter Thr Voltage-Max:

    7.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Reference Standard:

    AEC-Q101

  • Rise Time-Max (tr):

    71 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    197 ns

  • Turn-on Time-Nom (ton):

    87 ns

FGH75T65UPD-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Monitor the device's junction temperature, drain-source voltage, and current. Implement over-temperature, over-voltage, and over-current protection mechanisms to prevent damage.
  • Yes, the FGH75T65UPD-F085 is AEC-Q101 qualified and suitable for high-reliability and automotive applications. Ensure compliance with relevant industry standards and guidelines.
  • Use a gate driver with a high current capability (>1A) and a low output impedance. Ensure the gate drive voltage is within the recommended range (typically 10-15V) and adjust the gate resistance to minimize ringing.

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FGH75T65UPD-F085 Overview

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Part Image FGH75T65UPD_F085 onsemi

Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, TO-247AB