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FGHL50T65LQDT - onsemi

Description: Positive temperature co-efficient; Low Vce(sat)

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FGHL50T65LQDT Details

  • Manufacturer Part Number:

    FGHL50T65LQDT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    341 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    508 ns

  • Turn-on Time-Nom (ton):

    66 ns

  • VCEsat-Max:

    1.35 V

FGHL50T65LQDT Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves using a 2-layer or 4-layer board with a solid ground plane, and placing the device near the center of the board. Thermal management involves using a heat sink with a thermal interface material, and ensuring good airflow around the device.
  • To ensure proper biasing, the gate driver should be capable of providing a voltage swing of at least 10V to 15V, and the gate resistance should be minimized to reduce switching losses. Additionally, the device should be operated within the recommended voltage and current ratings.
  • Critical parameters to monitor include the device temperature, voltage, and current. The device temperature should be kept below the maximum rated junction temperature, and the voltage and current should be within the recommended operating ranges.
  • To protect the device from ESD and EOS, use ESD-sensitive handling procedures, and ensure that the device is properly grounded during handling and assembly. Additionally, use voltage clamping devices and TVS diodes to protect the device from voltage transients and surges.
  • Recommended testing and validation procedures include characterizing the device's electrical parameters, such as voltage and current ratings, and performing reliability tests, such as temperature cycling and humidity testing, to ensure the device meets the required specifications.

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FGHL50T65LQDT Overview

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