FGHL5 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FGHL50T65SQ onsemi	1	VCE(sat) = 1.6V (typ.) @ IC = 50A; High speed switching	Transistor Outline, Vertical	FGHL50T65SQ	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL50T65SQDC onsemi	1	Maximum Junction Temperature, Tj=175°C; Automotive Qualified; Very low switching and conduction losses; Positive temperature co-efficient; 100% of the parts are dynamically tested; Copacked with SiC schottky barrier diode; Tight parameter distribution	Transistor Outline, Vertical	AFGHL50T65SQDC	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL50T65SQD onsemi	1	AEC Q101 qualified; Maximum Junction Temperature, Tj=175°C; Very low switching and conduction losses; Positive temperature co-efficient; Tight parameter distribution; Fast Switching; Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A; 100% of the parts are tested for ILM	Transistor Outline, Vertical	AFGHL50T65SQD	3D model available Symbol and footprint available 3	1 Download Model
	AFGHL50T65RQDN onsemi	1	AEC Q101 qualified; Maximum Junction Temperature : TJ = 175℃; Positive Temperature Co-efficient for Easy Parallel Operating; Tighten Parameter Distribution; Low Saturation Voltage; Short circuit rated	Transistor Outline, Vertical	AFGHL50T65RQDN	3D model available Symbol and footprint available 3	1 Download Model

	FGHL50T65LQDTL4 onsemi	1	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247		FGHL50T65LQDTL4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FGHL50T65MQDT onsemi	1	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247		FGHL50T65MQDT	3D model not available Symbol and footprint not available 0	0 Build or Request
	FGHL50T65MQD onsemi	1	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247		FGHL50T65MQD	3D model not available Symbol and footprint not available 0	0 Build or Request
	FGHL50T65MQDTL4 onsemi	1	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247		FGHL50T65MQDTL4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FGHL50T65LQD onsemi	1	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247		FGHL50T65LQD	3D model not available Symbol and footprint not available 0	0 Build or Request
	FGHL50T65LQDT onsemi	1	Positive temperature co-efficient; Low Vce(sat)		FGHL50T65LQDT	3D model available Symbol and footprint not available 1	1 Download Model
	FGHL50T65SQDT onsemi	1	High Current Capability; Maximum Junction Temperature: TJ =175°C; Positive Temperature Co-efficient; Low Saturation Voltage: VCE(sat) =1.47 V(Typ.) @ IC = 50 A; Fast Switching; This Device is Pb−Free and is RoHS Compliant		FGHL50T65SQDT	3D model available Symbol and footprint not available 1	1 Download Model
	ENGAFGHL50T65SQDC onsemi	1	Insulated Gate Bipolar Transistor, 88.7A I(C), 650V V(BR)CES, N-Channel, TO-247		ENGAFGHL50T65SQDC	3D model not available Symbol and footprint not available 0	0 Build or Request
	AFGHL50T65SQ onsemi	1	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247		AFGHL50T65SQ	3D model not available Symbol and footprint not available 0	0 Build or Request

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