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FGHL50T65SQ - onsemi

Description: VCE(sat) = 1.6V (typ.) @ IC = 50A; High speed switching

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PCB Footprints
FGHL50T65SQ - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3LD
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3D Models
FGHL50T65SQ - onsemi  - 3D model - Transistor Outline, Vertical - TO-247-3LD
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FGHL50T65SQ Details

  • Manufacturer Part Number:

    FGHL50T65SQ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2018-12-17

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    268 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    2.1 V

FGHL50T65SQ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and a thermal relief pattern is recommended. Ensure a minimum of 1 oz copper thickness and a thermal pad size of at least 50 mm². Use thermal vias and a heat sink if possible.
  • Use a robust power-on reset circuit, ensure a slow and controlled VCC ramp-up, and add a 10-100 nF capacitor between VCC and GND to filter out noise. Avoid overvoltage and ensure a stable input voltage.
  • Use a shielded enclosure, keep sensitive traces away from the FGHL50T65SQ, and add a common-mode choke or ferrite bead to the power lines. Ensure a low-impedance return path and use a 10-100 nF capacitor between VCC and GND to filter out noise.
  • Use a dedicated gate driver IC or a high-current, low-impedance gate drive circuit. Ensure a fast rise and fall time (<10 ns) and a gate-source voltage of at least 10 V. Optimize the gate resistance and inductance for minimal power loss.
  • Use a high-bandwidth oscilloscope (>500 MHz) and a current probe or shunt resistor to measure drain-source voltage and current. Ensure a low-inductance measurement setup and use a high-frequency current probe for accurate measurements.

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FGHL50T65SQ Overview

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