Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FGL60N100BNTD - onsemi

Description: Last Shipments - 1000V, 60A, NPT Trench IGBT

Download FGL60N100BNTD Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FGL60N100BNTD - onsemi - PCB symbol
click to zoom
PCB Footprints
FGL60N100BNTD - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−264−3LD CASE 340CA ISSUE O
click to zoom
3D Models
FGL60N100BNTD - onsemi - 3D model - Transistor Outline, Vertical - TO−264−3LD CASE 340CA ISSUE O
click to zoom

FGL60N100BNTD Details

  • Manufacturer Part Number:

    FGL60N100BNTD

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-264-3

  • Package Description:

    TO-264, 3 PIN

  • Manufacturer Package Code:

    340CA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1000 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    760 ns

  • Turn-on Time-Nom (ton):

    460 ns

FGL60N100BNTD Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FGL60N100BNTD is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FGL60N100BNTD is between 10V and 15V. However, the exact voltage may vary depending on the specific application and switching frequency.
  • Yes, the FGL60N100BNTD can be used in a parallel configuration, but it's essential to ensure that the devices are matched and the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the FGL60N100BNTD is 10kV/μs. Exceeding this rating may cause the device to fail or malfunction.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FGL60N100BNTD Overview

Use the download button to access the FGL60N100BNTD schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FGL60, or try a keyword search, such as IGBTs

Suggested Parts

If you searched for FGL60N100BNTD, you might also be interested in these parts:
Part Number
FGL40N120ANDTU
ACPL-C87AT-500E
ACS37612LLUATR-010B5
IRG7PH35UD1-EP
HGT1S12N60A4DS
FDMA1029PZ
HCS410-I/P
HCS473/P
MMBF4119

Parts related to FGL60N100BNTD

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

FGL60N100BNTD Alternates

Showing results

Image Part Number Model
Part Image FGL60N100BNTD Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA
Part Image FGL60N100BNTDTU onsemi

Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-264AA