Part Image

FQB34P10TM-F085 - onsemi

Description: MOSFET P-CH 100V 33.5A D2PAK

Download FQB34P10TM-F085 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQB34P10TM-F085 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
click to zoom
3D Models
FQB34P10TM-F085 - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
click to zoom

FQB34P10TM-F085 Details

  • Manufacturer Part Number:

    FQB34P10TM-F085

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SMALL OUTLINE, R-PSSO-G2

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    2200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    33.5 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    155 W

  • Pulsed Drain Current-Max (IDM):

    134 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQB34P10TM-F085 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the FQB34P10TM-F085 is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure proper thermal management, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the MOSFET is mounted on a heat sink with a thermal resistance of less than 10°C/W.
  • The maximum allowed voltage for the FQB34P10TM-F085's gate-source voltage (Vgs) is ±20V, but it's recommended to keep it within ±15V for reliable operation.
  • Yes, the FQB34P10TM-F085 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the FQB34P10TM-F085 with ESD-protective equipment, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQB34P10TM-F085 Overview

Use the download button to access the FQB34P10TM-F085 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQB34, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQB34P10TM-F085

Showing 0 results

FQB34P10TM-F085 Alternates

Showing results

Image Part Number Model
Part Image FQB34P10TM onsemi

Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FQB34P10TM Rochester Electronics LLC

33.5A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3

Part Image FQB34P10TM_F085 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image FQB34P10TM_F085 onsemi

-100V, -33.5A, 60mΩ, D2PAK P-Channel QFET®, TO-263 2L (D2PAK), 6400-TAPE REEL