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FQT1N60CTF-WS - onsemi

Description: 0.2A, 600V, RDS(on) = 9.3Ω(Typ.) @VGS = 10 V, ID = 0.1A; Low gate charge ( Typ. 4.8nC); Low Crss ( Typ. 3.5pF); 100% avalanche tested; RoHS compliant

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FQT1N60CTF-WS - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FQT1N60CTF-WS
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FQT1N60CTF-WS - onsemi  - 3D model - SOT223 (3-Pin) - FQT1N60CTF-WS
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FQT1N60CTF-WS Details

  • Manufacturer Part Number:

    FQT1N60CTF-WS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223 4L

  • Package Description:

    ROHS COMPLIANT PACKAGE-4

  • Manufacturer Package Code:

    318H-01

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    11.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    250

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQT1N60CTF-WS Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FQT1N60CTF-WS is a standard SOT-223 package footprint with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -55°C to 150°C, and follow proper thermal management and cooling techniques.
  • The maximum allowed voltage transient for FQT1N60CTF-WS is 80V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • While FQT1N60CTF-WS can be used in switching applications, it is not recommended for high-frequency switching (>100kHz) due to its relatively high gate charge and switching losses. A more suitable device for high-frequency switching would be a MOSFET with lower gate charge and switching losses.
  • To protect FQT1N60CTF-WS from ESD, follow proper handling and storage procedures, use ESD-protective packaging and materials, and ensure that the device is properly grounded during assembly and testing.

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FQT1N60CTF-WS Overview

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