FQT1N Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 0.2A, 600V, RDS(on) = 9.3Ω(Typ.) @VGS = 10 V, ID = 0.1A; Low gate charge ( Typ. 4.8nC); Low Crss ( Typ. 3.5pF); 100% avalanche tested; RoHS compliant SOT223 (3-Pin) FQT1N60CTF-WS 1 Download Model
Part Image Part Image 1 RoHS compliant; 100% avalanche tested; 0.2A, 800V, RDS(on) = 15.5Ω(Typ.) @VGS = 10 V, ID = 0.1A; Low gate charge ( Typ. 5.5nC); Low Crss ( Typ. 2.7pF) SOT223 (3-Pin) FQT1N80TF-WS 1 Download Model
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FQT1N80 onsemi
1 Power MOSFET, N-Channel, QFET®, 800 V, 0.2 A, 20 Ω, SOT-223 Other FQT1N80 1 Download Model
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FQT1N60C Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor FQT1N60C 0 Build or Request
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FQT1N80 Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.2A I(D), 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQT1N80 0 Build or Request
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FQT1N60C onsemi
1 Small Signal Field-Effect Transistor, 0.2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQT1N60C 0 Build or Request
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FQT1N80TF_WS Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.0002A I(D), 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 FQT1N80TF_WS 0 Build or Request
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FQT1N60CTF_WS Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 FQT1N60CTF_WS 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 0.2A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQT1N80TF_WS 0 Build or Request
Part Image Part Image 1 N-Channel QFET® MOSFET 600V, 0.2A, 11.5Ω, SOT-223 4L, 16000-TAPE REEL FQT1N60CTF_WS 0 Build or Request
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