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FQT1N80TF-WS - onsemi

Description: RoHS compliant; 100% avalanche tested; 0.2A, 800V, RDS(on) = 15.5Ω(Typ.) @VGS = 10 V, ID = 0.1A; Low gate charge ( Typ. 5.5nC); Low Crss ( Typ. 2.7pF)

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FQT1N80TF-WS - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FQT1N80TF-WS
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FQT1N80TF-WS - onsemi  - 3D model - SOT223 (3-Pin) - FQT1N80TF-WS
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FQT1N80TF-WS Details

  • Manufacturer Part Number:

    FQT1N80TF-WS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 4L

  • Package Description:

    SOT-223, 4 PIN

  • Manufacturer Package Code:

    318H-01

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    20 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    0.8 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    100 ns

  • Turn-on Time-Max (ton):

    90 ns

FQT1N80TF-WS Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FQT1N80TF-WS is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliable operation of FQT1N80TF-WS in high-temperature environments, it is recommended to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and avoiding thermal hotspots.
  • The maximum allowed voltage transient for FQT1N80TF-WS is 100V for a duration of 100ms, as specified in the datasheet. However, it is recommended to limit voltage transients to 80V or less to ensure reliable operation.
  • Yes, FQT1N80TF-WS can be used in a switching regulator application, but it is recommended to ensure that the device is operated within its safe operating area (SOA) and that proper snubbing and filtering are used to minimize voltage and current transients.
  • The optimal gate resistor value for FQT1N80TF-WS depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10Ω and 100Ω, and to adjust the value based on the device's switching characteristics and the desired switching frequency.

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FQT1N80TF-WS Overview

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Part Image FQT1N80TF_WS onsemi

Power Field-Effect Transistor, 0.2A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET