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GT30J121 - Toshiba

Description: Toshiba GT30J121, IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-3P

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PCB Footprints
GT30J121 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1C_20222
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3D Models
GT30J121 - Toshiba  - 3D model - Transistor Outline, Vertical - 2-16C1C_20222
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GT30J121 Details

  • Manufacturer Part Number:

    GT30J121

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    LEAD FREE, 2-16C1C, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Additional Feature:

    HIGH SPEED

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    430 ns

  • Turn-on Time-Nom (ton):

    240 ns

GT30J121 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the top and bottom layers connected to the thermal pad, and to use thermal vias to dissipate heat. Additionally, keeping the component placement and routing away from the thermal pad can help reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, ensure good thermal design, and consider derating the device's power handling capability. Additionally, using a heat sink or thermal interface material can help reduce the junction temperature.
  • Exceeding the maximum junction temperature can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection for the GT30J121, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits or devices in the system design. Additionally, ensuring a safe and controlled environment during manufacturing and assembly can help prevent ESD damage.
  • When paralleling multiple GT30J121 devices, it's essential to ensure that each device has an identical thermal environment, and that the current sharing is balanced. Additionally, the PCB layout should be designed to minimize inductance and resistance, and the devices should be matched for optimal performance.

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