GT30J Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	GT30J122A Toshiba	1	600 V/30 A IGBT, TO-3P(N)	Other	GT30J122A	3D model available Symbol and footprint available 3	1 Download Model
	GT30J121 Toshiba	1	Toshiba GT30J121, IGBT Transistor, 30 A 600 V, 1MHz, 3-Pin TO-3P	Transistor Outline, Vertical	GT30J121	3D model available Symbol and footprint available 3	1 Download Model
	GT30J65MRB Toshiba	1	Discrete IGBTs Silicon N-Channel IGBT	Other	GT30J65MRB	3D model available Symbol and footprint available 3	1 Download Model
	GT30J110SRA Toshiba	1	1100 V/60 A IGBT, Built-in Diodes, TO-3P(N)	Other	GT30J110SRA	3D model available Symbol and footprint available 3	1 Download Model

	GT30J341,Q Toshiba	1	Pb-F IGBT / TRANSISTOR TO-3PN MOQ=50 V=600 F=60HZ	Transistor Outline, Vertical	GT30J341,Q	3D model available Symbol and footprint available 3	1 Download Model
	GT30J341,Q(O Toshiba	1	Toshiba GT30J341,Q(O, IGBT Transistor, 59 A 600 V, 0.4μs, 3-Pin TO-3P	Transistor Outline, Vertical	GT30J341,Q(O	3D model available Symbol and footprint available 3	1 Download Model
	GT30J341 Toshiba	1	600 V/33 A IGBT, Built-in Diodes, TO-3P(N)	Other	GT30J341	3D model available Symbol and footprint available 3	1 Download Model
	GT30J324(Q) Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J324(Q)	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J110SRA Toshiba Electronic Devices & Storage Corporation	0	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)		GT30J110SRA	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J322 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J322	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J341 Toshiba Electronic Devices & Storage Corporation	1	IGBT, 600 V, 33 A, Built-in Diodes, TO-3P(N)		GT30J341	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J122A Toshiba Electronic Devices & Storage Corporation	1	IGBT, 600 V, 30 A, TO-3P(N)		GT30J122A	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J110SRA,S1E Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor		GT30J110SRA,S1E	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J122(Q) Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J122(Q)	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J122 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J122	3D model not available Symbol and footprint not available 0	0 Build or Request

	GT30J101 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J101	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J65MRB Toshiba Electronic Devices & Storage Corporation	1	IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N)		GT30J65MRB	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J122A(STA1,E,D Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor		GT30J122A(STA1,E,D	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J301 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J301	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J341,STA1E Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor		GT30J341,STA1E	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J126 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J126	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J65MRB,S1E Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor		GT30J65MRB,S1E	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J121 Toshiba Electronic Devices & Storage Corporation	1	IGBT, 600 V, 30 A, TO-3P(N)		GT30J121	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J324 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J324	3D model not available Symbol and footprint not available 0	0 Build or Request
	GT30J311 Toshiba America Electronic Components	1	Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel		GT30J311	3D model not available Symbol and footprint not available 0	0 Build or Request
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