Part Image

GT30J341,Q - Toshiba

Description: Pb-F IGBT / TRANSISTOR TO-3PN MOQ=50 V=600 F=60HZ

Download GT30J341,Q Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
GT30J341,Q - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-3p(n)-ren1
click to zoom
3D Models
GT30J341,Q - Toshiba  - 3D model - Transistor Outline, Vertical - to-3p(n)-ren1
click to zoom

GT30J341,Q Details

  • Manufacturer Part Number:

    GT30J341,Q

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-3P, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.25

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    59 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    400 ns

  • Turn-on Time-Nom (ton):

    250 ns

  • VCEsat-Max:

    2 V

GT30J341,Q Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the top and bottom layers connected to the thermal pad, and to use thermal vias to dissipate heat. Additionally, keeping the component placement and routing away from the thermal pad can help reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow to reduce the thermal resistance.
  • The GT30J341,Q has built-in ESD protection, but it's still important to follow standard ESD handling precautions, such as using an anti-static wrist strap, anti-static mat, and storing the devices in anti-static packaging. Avoid touching the device pins or handling the device in a way that could generate static electricity.
  • The GT30J341,Q is a commercial-grade device, but Toshiba offers automotive-grade and high-reliability versions of similar devices. For high-reliability or automotive applications, consider using a device specifically designed and qualified for those markets, such as the GT30J341,Q-A or GT30J341,Q-H.
  • The recommended soldering conditions for the GT30J341,Q are a peak temperature of 260°C, with a soldering time of 10 seconds or less. It's essential to follow the recommended soldering profile to avoid damaging the device.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

GT30J341,Q Overview

Use the download button to access the GT30J341,Q schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like GT30J, or try a keyword search, such as IGBTs

Parts related to GT30J341,Q

Showing 0 results