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GT50J301 - Toshiba

Description: IGBT Transistors 3PL IGBT PP2,DISCON(07-10)/PHASE-OUT(11-01)/OBSOLETE(11-04),

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PCB Footprints
GT50J301 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-21F2C
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GT50J301 - Toshiba  - 3D model - Transistor Outline, Vertical - 2-21F2C
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GT50J301 Details

  • Manufacturer Part Number:

    GT50J301

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Additional Feature:

    HIGH SPEED

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    300 ns

  • Gate-Emitter Thr Voltage-Max:

    8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    200 W

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    500 ns

  • Turn-on Time-Nom (ton):

    400 ns

  • VCEsat-Max:

    2.7 V

GT50J301 Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a metal plate for further heat dissipation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device. Additionally, ensure proper heat sinking, and consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • Although not explicitly stated in the datasheet, the maximum allowable voltage for the gate-source and gate-drain pins is typically ±20V. Exceeding this voltage may damage the device.
  • Yes, the GT50J301 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the application's switching frequency is within the device's capabilities.
  • To protect the GT50J301 from ESD, follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected package. Additionally, consider adding ESD protection components, such as TVS diodes, to the circuit design.

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