GT50J Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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GT50JR22 Toshiba
1 Toshiba GT50JR22, IGBT Transistor, 50 A 600 V, 1MHz, 3-Pin TO-3P Transistor Outline, Vertical GT50JR22 1 Download Model
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GT50J301 Toshiba
1 IGBT Transistors 3PL IGBT PP2,DISCON(07-10)/PHASE-OUT(11-01)/OBSOLETE(11-04), Transistor Outline, Vertical GT50J301 1 Download Model
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GT50JR21 Toshiba
1 Toshiba GT50JR21, IGBT Transistor, 50 A 600 V, 1MHz, 3-Pin TO-3P Transistor Outline, Vertical GT50JR21 1 Download Model
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GT50J341 Toshiba
1 600 V/50 A IGBT, Built-in Diodes, TO-3P(N) Transistor Outline, Vertical GT50J341 1 Download Model
Part Image Part Image 1 Toshiba GT50J325(Q) IGBT, 50 A 600 V, 3-Pin TO-3PLH Transistor Outline, Vertical GT50J325(Q) 1 Download Model
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GT50J341,Q Toshiba
1 Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V Transistor Outline, Vertical GT50J341,Q 1 Download Model
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GT50J123 Toshiba
1 600 V/59 A IGBT, TO-3P(N) Other GT50J123 1 Download Model
Part Image Part Image 1 Toshiba GT50J342,Q(O, IGBT Transistor, 80 A 600 V, 0.38μs, 3-Pin TO-3P Transistor Outline, Vertical GT50J342,Q(O 1 Download Model
Part Image Part Image 1 Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ Transistor Outline, Vertical GT50JR21(STA1,E,S) 1 Download Model
Part Image Part Image 1 IGBT Transistors IGBT for Soft Switching Apps Transistor Outline, Vertical GT50JR22(STA1,E,S) 1 Download Model
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GT50J123,STA1E(S Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor GT50J123,STA1E(S 0 Build or Request
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GT50JR22(STA1,E Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor GT50JR22(STA1,E 0 Build or Request
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GT50JR21(STA1,E Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor GT50JR21(STA1,E 0 Build or Request
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GT50J322 Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel GT50J322 0 Build or Request
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GT50J102 Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel GT50J102 0 Build or Request
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GT50JR22 Toshiba Electronic Devices & Storage Corporation
1 IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N) GT50JR22 0 Build or Request
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GT50JR21 Toshiba Electronic Devices & Storage Corporation
1 IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N) GT50JR21 0 Build or Request
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GT50J325 Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel GT50J325 0 Build or Request
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GT50J301(Q) Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel GT50J301(Q) 0 Build or Request
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GT50J342 Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel GT50J342 0 Build or Request
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GT50J328(Q) Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel GT50J328(Q) 0 Build or Request
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GT50J121 Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel GT50J121 0 Build or Request
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GT50J122 Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel GT50J122 0 Build or Request
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GT50J341 Toshiba Electronic Devices & Storage Corporation
1 IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N) GT50J341 0 Build or Request
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GT50J328 Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel GT50J328 0 Build or Request
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