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GT50J341,Q - Toshiba

Description: Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V

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PCB Footprints
GT50J341,Q - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P(N)_1
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3D Models
GT50J341,Q - Toshiba  - 3D model - Transistor Outline, Vertical - TO-3P(N)_1
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GT50J341,Q Details

  • Manufacturer Part Number:

    GT50J341,Q

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-3P, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.25

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    350 ns

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    450 ns

  • Turn-on Time-Nom (ton):

    270 ns

  • VCEsat-Max:

    2.2 V

GT50J341,Q Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • The maximum allowed voltage transient for the GT50J341Q is ±20% of the rated voltage for a duration of ≤ 100ms. Exceeding this may cause damage to the device.
  • Yes, the GT50J341Q can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of electrical characteristics and that the PCB layout is designed to minimize current imbalance.
  • Toshiba recommends storing the GT50J341Q in a dry, cool place with a relative humidity of ≤ 60% and a temperature range of -10°C to 30°C. It's also recommended to use a moisture barrier bag or desiccant to prevent moisture absorption.

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