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GT50J341 - Toshiba

Description: 600 V/50 A IGBT, Built-in Diodes, TO-3P(N)

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PCB Footprints
GT50J341 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P(N)
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3D Models
GT50J341 - Toshiba  - 3D model - Transistor Outline, Vertical - TO-3P(N)
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GT50J341 Details

  • Manufacturer Part Number:

    GT50J341

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-3P

  • Package Description:

    TO-3P, 3 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    350 ns

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    450 ns

  • Turn-on Time-Nom (ton):

    270 ns

  • VCEsat-Max:

    2.2 V

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GT50J341 Overview

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