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GT50JR21 - Toshiba

Description: Toshiba GT50JR21, IGBT Transistor, 50 A 600 V, 1MHz, 3-Pin TO-3P

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Symbol
GT50JR21 - Toshiba - PCB symbol
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PCB Footprints
GT50JR21 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1S_2022-1
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3D Models
GT50JR21 - Toshiba - 3D model - Transistor Outline, Vertical - 2-16C1S_2022-1
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GT50JR21 Details

  • Manufacturer Part Number:

    GT50JR21

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-3P, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.25

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    210 ns

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    370 ns

  • Turn-on Time-Nom (ton):

    250 ns

  • VCEsat-Max:

    2 V

GT50JR21 Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Use a heat sink with a thermal interface material, and ensure good airflow around the device. Also, consider derating the device's power rating according to the temperature derating curve in the datasheet.
  • The maximum allowable voltage stress is 1.5 times the rated voltage (Vr) for a maximum duration of 10ms, as specified in the datasheet.
  • Yes, but ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive circuits are properly synchronized to prevent shoot-through currents.
  • Use ESD protection devices such as TVS diodes or ESD suppressors on the input and output lines, and follow proper handling and storage procedures to prevent ESD damage.

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