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HGTG10N120BND - onsemi

Description: Obsolete - 600V, SMPS IGBT

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HGTG10N120BND - onsemi - PCB symbol
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PCB Footprints
HGTG10N120BND - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A
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3D Models
HGTG10N120BND - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A
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HGTG10N120BND Details

  • Manufacturer Part Number:

    HGTG10N120BND

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    35 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    330 ns

  • Turn-on Time-Nom (ton):

    32 ns

HGTG10N120BND Frequently Asked Questions (FAQs)

  • The maximum allowed case temperature for the HGTG10N120BND is 125°C, as specified in the datasheet. However, it's recommended to keep the case temperature below 100°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the HGTG10N120BND is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the HGTG10N120BND can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing.
  • The maximum allowed voltage transient for the HGTG10N120BND is 1200 V, as specified in the datasheet. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the device.

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HGTG10N120BND Overview

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HGTG10N120BND Alternates

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Part Image HGTG10N120BND Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
Part Image HGTG10N120BND Intersil Corporation

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
Part Image HGTG10N120BN Intersil Corporation

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
Part Image HGTG10N120BND_NL Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
Part Image HGTG10N120BN Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
For a full list of alternate parts for HGTG10N120BND, check out Findchips.com