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HGTP10N120BN - onsemi

Description: 17A, 1200V, TC = 110°C; Low Conduction Loss; Short Circuit Rating; Low saturation voltage: VCE(sat) = 2.45V @ IC = 10A; Typical Fall Time. . . . . . . . . .140ns at TJ= 150°C

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HGTP10N120BN - onsemi - PCB symbol
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PCB Footprints
HGTP10N120BN - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2023
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3D Models
HGTP10N120BN - onsemi - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2023
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HGTP10N120BN Details

  • Manufacturer Part Number:

    HGTP10N120BN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    35 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    200 ns

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    298 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    15 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    450 ns

  • Turn-off Time-Nom (toff):

    330 ns

  • Turn-on Time-Max (ton):

    40 ns

  • Turn-on Time-Nom (ton):

    32 ns

  • VCEsat-Max:

    4.2 V

HGTP10N120BN Frequently Asked Questions (FAQs)

  • The maximum allowed case temperature for the HGTP10N120BN is 125°C, as specified in the datasheet. However, it's recommended to keep the case temperature below 100°C for optimal performance and reliability.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 0.5°C/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K should be used to fill the gap between the IGBT module and the heat sink.
  • The recommended gate resistance for the HGTP10N120BN is between 10 ohms and 100 ohms. A higher gate resistance can help reduce electromagnetic interference (EMI), but may also increase the turn-on time.
  • Yes, the HGTP10N120BN can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are matched in terms of their electrical characteristics and that the gate drive circuits are properly synchronized.
  • The maximum allowed voltage transient for the HGTP10N120BN is ±10% of the rated voltage. Exceeding this limit can cause damage to the IGBT module.

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HGTP10N120BN Overview

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