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HGTG12N60A4D - onsemi

Description: Obsolete - 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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Symbol
HGTG12N60A4D - onsemi - PCB symbol
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PCB Footprints
HGTG12N60A4D - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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3D Models
HGTG12N60A4D - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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HGTG12N60A4D Details

  • Manufacturer Part Number:

    HGTG12N60A4D

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    54 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    95 ns

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    265 ns

  • Turn-off Time-Nom (toff):

    180 ns

  • Turn-on Time-Nom (ton):

    33 ns

  • VCEsat-Max:

    2.7 V

HGTG12N60A4D Frequently Asked Questions (FAQs)

  • The maximum allowed case temperature for the HGTG12N60A4D is 125°C, as specified in the datasheet. However, it's recommended to keep the case temperature below 100°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the IGBT module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistance for the HGTG12N60A4D is between 10 ohms and 20 ohms. This value helps to reduce electromagnetic interference (EMI) and ensures reliable switching performance.
  • Yes, the HGTG12N60A4D can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are matched in terms of their electrical characteristics, and that the gate drive circuits are properly synchronized to prevent uneven current sharing.
  • The maximum allowed voltage transient for the HGTG12N60A4D is 600 V, as specified in the datasheet. Exceeding this value can damage the IGBT module. It's essential to ensure that the voltage transients are within the specified limits to ensure reliable operation.

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HGTG12N60A4D Overview

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HGTG12N60A4D Alternates

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Part Image HGTG12N60A4D Intersil Corporation

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