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HGTG30N60A4 - onsemi

Description: Typical Fall Time. . . . . . . . . . 58ns at TJ = 125°C; Low Saturation Voltage : V CE(sat) = 1.8 V @ I C = 30A; Low Conduction Loss; 60A, 600V @ TC = 110°C

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HGTG30N60A4 - onsemi - PCB symbol
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PCB Footprints
HGTG30N60A4 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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3D Models
HGTG30N60A4 - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CK ISSUE O
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HGTG30N60A4 Details

  • Manufacturer Part Number:

    HGTG30N60A4

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    70 ns

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    463 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    238 ns

  • Turn-on Time-Nom (ton):

    35 ns

HGTG30N60A4 Frequently Asked Questions (FAQs)

  • The maximum allowed case temperature for the HGTG30N60A4 is 125°C, as specified in the datasheet. However, it's recommended to keep the case temperature below 100°C for optimal performance and reliability.
  • To ensure proper cooling, a heat sink with a thermal resistance of 1.5°C/W or lower is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of 1 W/m-K or higher should be used to fill the gap between the IGBT module and the heat sink.
  • The recommended gate resistance for the HGTG30N60A4 is between 10 ohms and 100 ohms. A higher gate resistance can help reduce electromagnetic interference (EMI), but may also increase the turn-on and turn-off times.
  • Yes, the HGTG30N60A4 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are matched in terms of their electrical characteristics and that the gate drive circuits are properly synchronized to prevent uneven current sharing.
  • The maximum allowed voltage transient for the HGTG30N60A4 is 120% of the maximum rated voltage (600V) for a duration of 10 microseconds or less. Exceeding this limit can damage the IGBT module.

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HGTG30N60A4 Overview

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Part Image HGTG30N60A4 Intersil Corporation

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247