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IKQ50N120CT2XKSA1 - Infineon

Description: IGBT 1200V 50A TRENCHSTOP2 Diode TO-247

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IKQ50N120CT2XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-ren2
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IKQ50N120CT2XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - TO-247-ren2
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IKQ50N120CT2XKSA1 Details

  • Manufacturer Part Number:

    IKQ50N120CT2XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-247-3-46, 3 PIN

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    530 ns

  • Turn-on Time-Nom (ton):

    79 ns

IKQ50N120CT2XKSA1 Frequently Asked Questions (FAQs)

  • The maximum allowed overcurrent for the IKQ50N120CT2XKSA1 is 2.5 times the nominal current (50A) for a maximum of 10ms, according to the datasheet.
  • To ensure thermal management, ensure a good thermal interface between the module and the heat sink, use a heat sink with a thermal resistance of ≤ 0.5 K/W, and maintain a maximum junction temperature of 150°C.
  • The recommended gate resistor value is between 10Ω and 20Ω, depending on the specific application and switching frequency.
  • Yes, the IKQ50N120CT2XKSA1 can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management between the parallel modules.
  • The maximum allowed voltage imbalance is ±10% of the nominal DC link voltage, according to the datasheet.

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Part Image IKQ50N120CT2 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, TO-247