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IPN60R3K4CEATMA1 - Infineon

Description: MOSFET CONSUMER

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IPN60R3K4CEATMA1 - Infineon PCB footprint - Other - Other - PG-SOT223_2020
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IPN60R3K4CEATMA1 Details

  • Manufacturer Part Number:

    IPN60R3K4CEATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    3.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPN60R3K4CEATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPN60R3K4CEATMA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the MOSFET and heat sink.
  • The recommended gate resistor value for IPN60R3K4CEATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, IPN60R3K4CEATMA1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the MOSFET is properly driven and cooled to prevent overheating.
  • To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a TVS diode to limit the voltage, and a current sense resistor or a fuse to detect and limit excessive current.

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IPN60R3K4CEATMA1 Overview

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