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IPN80R2K4P7ATMA1 - Infineon

Description: MOSFET N-CH 800V 2.5A SOT223

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IPN80R2K4P7ATMA1 - Infineon PCB footprint - Other - Other - IPN80R2K4P7ATMA1-3
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IPN80R2K4P7ATMA1 - Infineon  - 3D model - Other - IPN80R2K4P7ATMA1-3
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IPN80R2K4P7ATMA1 Details

  • Manufacturer Part Number:

    IPN80R2K4P7ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain-source On Resistance-Max:

    2.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPN80R2K4P7ATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching. Consult Infineon's gate driver selection guide for more information.
  • The IPN80R2K4P7ATMA1 has a maximum allowed overcurrent of 2.5 times the nominal current (Ic) for a duration of 10ms. To protect the module, use a fast-acting fuse or a current sensing circuit with a shutdown mechanism to prevent damage from overcurrent conditions.
  • Ensure good thermal contact between the module and the heat sink by applying a thin layer of thermal interface material. Use a heat sink with a thermal resistance of ≤ 0.5 K/W and a sufficient surface area to dissipate the heat generated by the module. Consult Infineon's thermal management guidelines for more information.
  • Store the module in a dry, cool place away from direct sunlight and moisture. Handle the module by the edges to prevent damage to the pins or internal components. Avoid bending or flexing the module, and use an anti-static wrist strap or mat when handling the module to prevent ESD damage.

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IPN80R2K4P7ATMA1 Overview

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