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IPN80R900P7 - Infineon

Description: Transistor=N-Channel Power MOSFET, ID=6A, IDpuls=14A, Mounting=SMT, Temperature=-55°C 150°C, Ptot=7W, Package=SOT-223, QG=15nC, Qgd=6nC, RDS=900mΩ, RthJA=160K/W, VDS=800V, VGS=2.5V 3.5V

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IPN80R900P7 - Infineon PCB footprint - Other - Other - IPN80R900P7
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IPN80R900P7 Details

  • Manufacturer Part Number:

    IPN80R900P7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain-source On Resistance-Max:

    0.9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IPN80R900P7 Overview

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Part Image IPN80R900P7ATMA1 Infineon Technologies AG

Small Signal Field-Effect Transistor, 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET