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IPW65R041CFDFKSA1 - Infineon

Description: MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2

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IPW65R041CFDFKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPW65R041CFDFKSA1
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IPW65R041CFDFKSA1 Details

  • Manufacturer Part Number:

    IPW65R041CFDFKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    2185 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    68.5 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Pulsed Drain Current-Max (IDM):

    255 A

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW65R041CFDFKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPW65R041CFDFKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPW65R041CFDFKSA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, IPW65R041CFDFKSA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • Use a voltage regulator or a voltage supervisor to ensure the device operates within the recommended voltage range of 12 V to 24 V.

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IPW65R041CFDFKSA1 Overview

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Part Image IPW65R041CFDFKSA2 Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R041CFD Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R041CFDXK Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247