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IR2308PBF - Infineon

Description: Infineon IR2308PBF Dual Half Bridge MOSFET Power Driver 350mA, 10 → 20 V, Non-Inverting, PDIP 8-Pin

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Symbol
IR2308PBF - Infineon - PCB symbol
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PCB Footprints
IR2308PBF - Infineon PCB footprint - Other - Other - 8-Lead PDIP
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3D Models
IR2308PBF - Infineon - 3D model - Other - 8-Lead PDIP
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IR2308PBF Details

  • Manufacturer Part Number:

    IR2308PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DIP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • High Side Driver:

    YES

  • Input Characteristics:

    GATED SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDIP-T8

  • Length:

    9.88 mm

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    0.35 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    DIP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Seated Height-Max:

    5.33 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Supply Voltage1-Max:

    620 V

  • Supply Voltage1-Min:

    5 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Turn-off Time:

    0.28 µs

  • Turn-on Time:

    0.3 µs

  • Width:

    7.62 mm

IR2308PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IR2308PBF is -40°C to 150°C, but it's recommended to operate within -20°C to 125°C for optimal performance.
  • The bootstrap capacitor should be sized based on the maximum voltage and current requirements of the high-side driver. A general rule of thumb is to use a capacitor with a value of 10nF to 100nF, and a voltage rating of at least 2x the maximum voltage of the high-side driver.
  • To minimize EMI and noise, it's recommended to place the IR2308PBF close to the power MOSFET, and use a ground plane to shield the high-frequency signals. The bootstrap capacitor should be placed as close as possible to the high-side driver, and the layout should be designed to minimize loop areas and reduce radiation.
  • The IR2308PBF has built-in overvoltage protection, but it's still recommended to add external protection circuitry to protect against overvoltage and undervoltage conditions. This can include voltage regulators, TVS diodes, and/or zener diodes.
  • The recommended dead time for the IR2308PBF is typically in the range of 100ns to 500ns, depending on the specific application and switching frequency. A longer dead time can reduce EMI and noise, but may also increase power losses and reduce overall efficiency.

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IR2308PBF Overview

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