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IRF5305 - Infineon

Description: MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB

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Symbol
IRF5305 - Infineon - PCB symbol
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PCB Footprints
IRF5305 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB 3pin
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3D Models
IRF5305 - Infineon - 3D model - Transistor Outline, Vertical - TO-220AB 3pin
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IRF5305 Details

  • Manufacturer Part Number:

    IRF5305

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    225

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF5305 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the IRF5305 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To calculate the power dissipation of the IRF5305, you need to know the drain-source on-state resistance (Rds(on)), the drain current (Id), and the voltage across the device (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) * Id^2 + Vds * Id. You can find the Rds(on) value in the datasheet.
  • The recommended gate drive voltage for the IRF5305 is between 10V and 15V. A higher gate drive voltage can reduce the turn-on resistance and improve the switching performance, but it may also increase the power consumption and electromagnetic interference (EMI).
  • Yes, the IRF5305 is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the device is properly cooled and the switching losses are minimized to prevent overheating and reduce the electromagnetic interference (EMI).
  • To protect the IRF5305 from overvoltage and overcurrent, you can use a voltage clamp or a zener diode to limit the voltage across the device. You can also use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.

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IRF5305 Overview

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