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IRF830 - STMicroelectronics

Description: This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

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IRF830 - STMicroelectronics - PCB symbol
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IRF830 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 mechanical data
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IRF830 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220 mechanical data
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IRF830 Details

  • Manufacturer Part Number:

    IRF830

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    HIGH VOLTAGE, FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    55 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    100 W

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    205 ns

  • Turn-on Time-Max (ton):

    102 ns

IRF830 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRF830 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. A safe operating area curve can be obtained from the manufacturer or through simulation and testing.
  • To ensure the IRF830 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and for turn-off, ensure Vgs is less than the threshold voltage (Vth) of around 2-3V. Also, consider using a gate driver or a dedicated IC to ensure proper switching.
  • The maximum Tj for the IRF830 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
  • Yes, the IRF830 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure proper layout and decoupling to minimize ringing and electromagnetic interference (EMI).
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the IRF830 from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRF830 Overview

Use the download button to access the IRF830 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF83, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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IRF830 Alternates

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Image Part Number Model
Part Image IRF830 Samsung Semiconductor

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRF830 Intersil Corporation

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRF830 Vishay Siliconix

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRF830 TT Electronics Resistors

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRF830 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
For a full list of alternate parts for IRF830, check out Findchips.com