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IRF8910PBF - Infineon

Description: HEXFET POWER MOSFET

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IRF8910PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF8910PBF Details

  • Manufacturer Part Number:

    IRF8910PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    19 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0134 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    82 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF8910PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF8910PBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF8910PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF8910PBF from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
  • The maximum allowable power dissipation for the IRF8910PBF is 150W, but this can be increased with proper heat sinking and thermal management.

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Part Image IRF8910TRPBF International Rectifier

Power Field-Effect Transistor, 10A I(D), N-Channel, Metal-oxide Semiconductor FET

Part Image IRF8910 International Rectifier

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF8910 Infineon Technologies AG

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF8910TR International Rectifier

Power Field-Effect Transistor, 10A I(D), N-Channel, Metal-oxide Semiconductor FET

Part Image IRF8910PBF-1 Infineon Technologies AG

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

For a full list of alternate parts for IRF8910PBF, check out Findchips.com