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IRF8910TRPBF - Infineon

Description: MOSFET DUAL NCh 20V 10A SO-8

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IRF8910TRPBF - Infineon - PCB symbol
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IRF8910TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF8910TRPBF - Infineon - 3D model - Small Outline Packages - SO-8
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IRF8910TRPBF Details

  • Manufacturer Part Number:

    IRF8910TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0134 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Moisture Sensitivity Level:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Surface Mount:

    YES

  • Time@Peak Reflow Temperature-Max (s):

    30

IRF8910TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF8910TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF8910TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF8910TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag when not in use.
  • The maximum allowable power dissipation for the IRF8910TRPBF is 150W, but this can be increased with proper heat sinking and thermal management.

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IRF8910TRPBF Overview

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IRF8910TRPBF Alternates

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Part Image IRF8910TRPBF International Rectifier

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Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF8910PBF International Rectifier

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Part Image IRF8910PBF-1 Infineon Technologies AG

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
For a full list of alternate parts for IRF8910TRPBF, check out Findchips.com