Part Image

IRFI3205PBF - Infineon

Description: MOSFET IRFI3205PBF 55V 64A 0.008R N Channel 55V TO-220FP TH

Download IRFI3205PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFI3205PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 Full-Pak
click to zoom
3D Models
IRFI3205PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220 Full-Pak
click to zoom

IRFI3205PBF Details

  • Manufacturer Part Number:

    IRFI3205PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    480 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    390 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFI3205PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFI3205PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • Use a multi-layer PCB with a solid ground plane, keep the drain and source pins as close as possible, and use a shielded cable for the gate signal to minimize EMI.
  • Yes, the IRFI3205PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper gate drive and layout to minimize switching losses and EMI.
  • Use a voltage regulator or a zener diode to limit the voltage, and add a current-sensing resistor and a fuse or a current limiter to protect against overcurrent conditions.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFI3205PBF Overview

Use the download button to access the IRFI3205PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFI3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFI3205PBF

Showing 0 results

IRFI3205PBF Alternates

Showing results

Image Part Number Model
Part Image AUIRFI3205 International Rectifier

Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRFI3205 International Rectifier

Power Field-Effect Transistor, 64A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFI3205PBF International Rectifier

Power Field-Effect Transistor, 64A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image AUIRFI3205 Infineon Technologies AG

Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET