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IRFL024ZTRPBF - Infineon

Description: Infineon IRFL024ZTRPBF N-Channel MOSFET, 5.1 A, 55 V HEXFET, 3+Tab-Pin SOT-223

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IRFL024ZTRPBF - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - IRFL024ZTRPBF
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IRFL024ZTRPBF - Infineon  - 3D model - SOT223 (3-Pin) - IRFL024ZTRPBF
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IRFL024ZTRPBF Details

  • Manufacturer Part Number:

    IRFL024ZTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.95

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    5.1 A

  • Drain-source On Resistance-Max:

    0.0575 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFL024ZTRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFL024ZTRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRFL024ZTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRFL024ZTRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
  • The maximum allowable power dissipation for the IRFL024ZTRPBF is 150W, but this can be affected by factors such as ambient temperature, thermal resistance, and airflow.

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IRFL024ZTRPBF Overview

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Small Signal Field-Effect Transistor, 5.1A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA