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IRFS4321TRLPBF - Infineon

Description: Infineon IRFS4321TRLPBF N-channel MOSFET, 85 A, 150 V HEXFET, 3-Pin D2PAK

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IRFS4321TRLPBF Details

  • Manufacturer Part Number:

    IRFS4321TRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    330 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS4321TRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS4321TRLPBF is -55°C to 175°C.
  • A recommended PCB layout for optimal thermal performance includes a thermal pad connected to a large copper area on the PCB, and a thermal via array to dissipate heat efficiently.
  • To ensure reliable operation in high-humidity environments, it is recommended to apply a conformal coating to the device, and to follow proper PCB design and assembly guidelines to prevent moisture ingress.
  • The recommended soldering conditions for the IRFS4321TRLPBF include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that prevents thermal shock to the device.
  • To troubleshoot issues with the IRFS4321TRLPBF, check for proper PCB design and assembly, ensure correct soldering and handling, and verify that the device is operated within its recommended specifications.

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IRFS4321TRLPBF Overview

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Image Part Number Model
Part Image IRFS4321TRRPBF International Rectifier

Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS4321TRLPBF International Rectifier

Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS4321PBF International Rectifier

Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS4321PBF Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS4321TRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRFS4321TRLPBF, check out Findchips.com