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IRLD110PBF - Vishay

Description: Vishay IRLD110PBF N-channel MOSFET Transistor, 1 A, 100 V, 4-Pin HVMDIP

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IRLD110PBF - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - 4 pin pdip
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IRLD110PBF - Vishay  - 3D model - Dual-In-Line Packages - 4 pin pdip
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IRLD110PBF Details

  • Manufacturer Part Number:

    IRLD110PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DIP-4

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLD110PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLD110PBF is -55°C to 150°C.
  • Yes, the IRLD110PBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The recommended gate resistor value for the IRLD110PBF is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IRLD110PBF can be used in parallel to increase current handling capability, but it's essential to ensure that the devices are properly matched and the gate drive circuitry is designed to handle the increased current.
  • The typical turn-on time for the IRLD110PBF is around 10-20 ns, and the typical turn-off time is around 20-30 ns, depending on the gate drive voltage and resistor value.

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