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IXFX64N60P3 - LITTELFUSE

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IXFX64N60P3 - LITTELFUSE  - 3D model
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IXFX64N60P3 Details

  • Manufacturer Part Number:

    IXFX64N60P3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1130 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFX64N60P3 Frequently Asked Questions (FAQs)

  • The recommended gate resistor value for the IXFX64N60P3 is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and improve noise immunity, but may also increase the turn-on time.
  • To ensure proper cooling, the IXFX64N60P3 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to provide adequate airflow, and the device should be mounted using a thermally conductive interface material. Additionally, the ambient temperature should be kept below 50°C to ensure reliable operation.
  • The IXFX64N60P3 can withstand voltage transients up to 600V for a duration of 10µs, according to the datasheet. However, it's recommended to limit voltage transients to 500V or less to ensure reliable operation and prevent damage to the device.
  • Yes, the IXFX64N60P3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive signals are properly synchronized to prevent shoot-through currents and ensure reliable operation.
  • The recommended storage temperature range for the IXFX64N60P3 is -40°C to 125°C. Storage outside of this range can affect the device's reliability and performance.

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IXFX64N60P3 Overview

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Part Image IXFX64N60Q3 Littelfuse Inc

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Part Image IXFX64N60P Littelfuse Inc

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Part Image IXFX64N60P3 IXYS Corporation

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Part Image IXFX64N60P IXYS Corporation

Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IXFX64N60Q3 IXYS Corporation

Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for IXFX64N60P3, check out Findchips.com