Part Image

LBSS138LT1G - LRC

Description: Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3

Download LBSS138LT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
LBSS138LT1G - LRC PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23(TO-236)
click to zoom
3D Models
LBSS138LT1G - LRC  - 3D model - SOT23 (3-Pin) - SOT23(TO-236)
click to zoom

LBSS138LT1G Details

  • Manufacturer Part Number:

    LBSS138LT1G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    LRC Leshan Radio Co Ltd

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    3.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

LBSS138LT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the LBSS138LT1G is -40°C to 85°C.
  • To configure the LBSS138LT1G for low power consumption, set the module to sleep mode when not in use, reduce the transmission power, and optimize the transmission frequency.
  • The maximum transmission distance of the LBSS138LT1G depends on the environment and obstacles, but it can reach up to 1 km in open space.
  • Yes, the LBSS138LT1G can be used with other wireless protocols such as FSK, GFSK, and OOK, but it is optimized for LoRaWAN.
  • To troubleshoot connectivity issues with the LBSS138LT1G, check the antenna orientation, ensure the module is properly configured, and verify the transmission frequency and power.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

LBSS138LT1G Overview

Use the download button to access the LBSS138LT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like LBSS1, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to LBSS138LT1G

Showing 0 results

LBSS138LT1G Alternates

Showing results

Image Part Number Model
Part Image BSS138LT7G onsemi

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image BSS138E6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS138TR Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image BSS138LT3 onsemi

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSS138E6433 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for LBSS138LT1G, check out Findchips.com