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LND150N3-G - Microchip

Description: LND150N3-G - Power MOSFET, N Channel, 500 V, 30 mA, 850 ohm, TO-92, Through Hole

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LND150N3-G - Microchip PCB footprint - Other - Other - TO-92 (N3)
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LND150N3-G - Microchip  - 3D model - Other - TO-92 (N3)
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LND150N3-G Details

  • Manufacturer Part Number:

    LND150N3-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Manufacturer Package Code:

    TO-92-3

  • Country Of Origin:

    Philippines, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.01

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    8

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    0.03 A

  • Drain-source On Resistance-Max:

    1000 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.74 W

  • Power Dissipation-Max (Abs):

    0.74 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

LND150N3-G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for LND150N3-G is 2.7V to 5.5V.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm.
  • The maximum input voltage that LND150N3-G can withstand is 6.5V.
  • The output current capability of LND150N3-G can be calculated using the formula: Iout = (Vin - Vout) / Rds(on) where Vin is the input voltage, Vout is the output voltage, and Rds(on) is the on-state resistance of the internal MOSFET.
  • The thermal shutdown temperature of LND150N3-G is 150°C.

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LND150N3-G Overview

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About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Part Image LND150N3-G Supertex Inc

Small Signal Field-Effect Transistor, 0.03A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92