Description:Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc = 0.75 Vdc (Max
The MJD200G can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
The MJD200G requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
Use a multi-layer PCB with a solid ground plane and a thermal relief pattern to dissipate heat. Ensure the device is mounted on a heat sink or thermal pad to maintain a low thermal resistance.
Use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. Handle the device with ESD-safe materials and follow proper ESD handling procedures.
Store the MJD200G in a dry, cool place away from direct sunlight. Handle the device with ESD-safe materials and avoid bending or flexing the leads. Use anti-static packaging and follow proper handling procedures.
Trust Checks
No trust score is available for this model.
Trust Score Unavailable
Sponsored
MJD200G Overview
Use the download button to access the MJD200G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MJD20,
or try a keyword search, such as Power Bipolar Transistors
