MJD200T4G - onsemi

Description: Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc = 0.75 Vdc (Max