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MJD200T4G - onsemi

Description: Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc = 0.75 Vdc (Max

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MJD200T4G - onsemi PCB footprint - Other - Other - MJD200T4G-1
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MJD200T4G - onsemi  - 3D model - Other - MJD200T4G-1
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MJD200T4G Details

  • Manufacturer Part Number:

    MJD200T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    13 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    65 MHz

MJD200T4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MJD200T4G is -55°C to 150°C.
  • To ensure proper biasing, connect the base to the emitter through a resistor (Rb) and connect the collector to the emitter through another resistor (Rc). The recommended values for Rb and Rc are 1 kΩ and 2.2 kΩ, respectively.
  • To minimize thermal resistance, use a thermal pad on the PCB and connect it to a large copper area. Ensure the thermal pad is connected to a heat sink or a metal plate to dissipate heat efficiently.
  • Yes, the MJD200T4G can be used in switching applications. However, ensure that the switching frequency is within the recommended range (up to 100 kHz) and that the device is properly biased to prevent overheating.
  • To protect the MJD200T4G from ESD, use an ESD wrist strap or mat when handling the device. Ensure that the PCB and components are properly grounded, and use ESD-sensitive handling procedures during assembly and testing.

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MJD200T4G Overview

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