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MRF300AN - NXP

Description: RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

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Symbol
MRF300AN - NXP - PCB symbol
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PCB Footprints
MRF300AN - NXP PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3
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3D Models
MRF300AN - NXP - 3D model - Transistor Outline, Vertical - TO-247-3
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MRF300AN Details

  • Manufacturer Part Number:

    MRF300AN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-1930-1, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    133 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.31 pF

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MRF300AN Frequently Asked Questions (FAQs)

  • The MRF300AN is designed to operate up to 1000 MHz, making it suitable for a wide range of RF applications.
  • To optimize biasing, ensure that the gate voltage (Vgs) is set between -2V to -4V, and the drain voltage (Vds) is set between 10V to 28V. Additionally, adjust the quiescent current (Idq) to the recommended value of 100mA to 200mA.
  • To ensure optimal performance and thermal management, use a multi-layer PCB with a solid ground plane, and place thermal vias under the device. Also, ensure good heat sinking and airflow around the device.
  • To protect the MRF300AN from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded.
  • The recommended matching networks for the MRF300AN depend on the specific application and frequency range. However, a general guideline is to use a low-pass or band-pass filter topology with a series inductor and shunt capacitor at the input, and a parallel inductor and capacitor at the output.

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MRF300AN Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like MRF30, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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