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NDS332P - onsemi

Description: Proprietary package design using copper lead frame for superior thermal and electrical capabilities; High density cell design for extremely low RDS(ON); Very low level gate drive requirements allowing direct operation in 3V circuits VGS(th) < 1.0V; -1 A, -20 V RDS(ON) = 0.41Ω @ VGS= -2.7 V RDS(ON) = 0.3 Ω @ VGS = -4.5 V; Exceptional on-resistance and maximum DC current capability; Compact industry standard SOT-23 surface Mount package

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PCB Footprints
NDS332P - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SSOT-3
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NDS332P - onsemi  - 3D model - SOT23 (3-Pin) - SSOT-3
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NDS332P Details

  • Manufacturer Part Number:

    NDS332P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE, ESD RATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDS332P Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the NDS332P is 2.7V to 5.5V.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and decouple it with a 10uF capacitor to ground. Also, ensure the input signals are within the recommended voltage range.
  • The maximum current draw of the NDS332P is 10mA, but it can be as low as 1uA in shutdown mode.
  • To implement a shutdown function, connect the SHDN pin to a logic low signal (typically 0V) to disable the device, and to a logic high signal (typically VCC) to enable it.
  • The maximum operating frequency of the NDS332P is 100MHz, but it can be as low as 10kHz depending on the application.

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NDS332P Overview

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Part Image NDS332P Rochester Electronics LLC

1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, SUPERSOT-3

Part Image NDS332P Fairchild Semiconductor Corporation

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Part Image NDS332P/S62Z Texas Instruments

1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

Part Image NDS332PL99Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET