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NDS351AN - onsemi

Description: 1.4A, 30 V; RDS(ON) = 160 mΩ @ VGS = 10 V; RDS(ON) = 250 mΩ @ VGS = 4.5 V; High performance trench technology for extremelylow RDS(ON); Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities; Ultra-Low gate charge

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PCB Footprints
NDS351AN - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR_1
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3D Models
NDS351AN - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR_1
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NDS351AN Details

  • Manufacturer Part Number:

    NDS351AN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.4 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDS351AN Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Focus on minimizing parasitic inductance, using a common-mode choke, and adding EMI filters. Ensure proper PCB layout, decoupling, and shielding to reduce electromagnetic interference.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits. Use a voltage regulator with built-in OVP and OCP, or add external components like TVS diodes and fuses.
  • Use a curve tracer or a parameter analyzer to measure the device's electrical characteristics. Ensure proper probing and socketing techniques to avoid damaging the device.

Trust Checks

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Manufacturer Collaborated
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System Verified
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Sponsored

NDS351AN Overview

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Part Image NDS351ANL99Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET