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NDS355AN - onsemi

Description: Exceptional on-resistance and maximum DC current capability ; Compact industry standard SOT-23 surface mount package ; Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities ; 1.7 A, 30 V. RDS(ON) = 0.125Ω @ VGS= 4.5 V RDS(ON) = 0.085 Ω @ VGS= 10 V ; High density cell design for extremely low RDS(ON)

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PCB Footprints
NDS355AN - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
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3D Models
NDS355AN - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
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NDS355AN Details

  • Manufacturer Part Number:

    NDS355AN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NDS355AN Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the NDS355AN is 2.7V to 5.5V, although it can tolerate up to 6.5V for short periods.
  • To ensure proper biasing, connect the gate pin to a voltage source through a 1kΩ to 10kΩ resistor, and the source pin to a voltage source through a 100Ω to 1kΩ resistor.
  • The maximum power dissipation for the NDS355AN is 1.4W, and it's essential to ensure the device is properly heat-sinked to prevent overheating.
  • Yes, the NDS355AN can be used as a switch. The switching characteristics include a turn-on time of 10ns, turn-off time of 20ns, and a rise/fall time of 5ns.
  • To protect the NDS355AN from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container.

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NDS355AN Overview

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Part Image NDS355AND87Z onsemi

Small Signal Field-Effect Transistor, 1.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET