NGTB50N60L2WG footprint, schematic symbol and 3D model by onsemi

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NGTB50N60L2WG Details

The maximum junction temperature (Tj) for the NGTB50N60L2WG is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a cold plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the maximum power dissipation of the device.
The recommended gate drive voltage for the NGTB50N60L2WG is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and the risk of gate oxide breakdown.
To protect the NGTB50N60L2WG from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
For optimal performance and to minimize electromagnetic interference (EMI), use a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. Keep the high-frequency loops small, and use a Kelvin connection for the gate drive signal.

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